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MIG75Q201H TOSHIBA Intelligent Power Module Silicon N Channel IGBT MIG75Q201H High Power Switching Applications Motor Control Applications l Integrates inverter, brake power circuits & control circuits (IGBT drive units, protection units for over-current, under-voltage & over-temperature) in one package. l The electrodes are isolated from case. l High speed type IGBT : VCE (sat) = 3.5 V (Max) toff = 2.5 s (Max) trr = 0.21 s (Max) l Package dimensions : TOSHIBA 2-136A1A l Weight : Equivalent Circuit 1 2001-05-29 MIG75Q201H Maximum Ratings (Tj = 25C ) Stage Characteristic Supply voltage Collector-emitter voltage Inverter Collector current Forward current Collector power dissipation Junction temperature Supply voltage Collector-emitter voltage Collector current Brake Reverse voltage Forward current Collector power dissipation Junction temperature Control supply voltage Control Input voltage Fault output voltage Fault output current Operating temperature Module Storage temperature range Isolation voltage Screw torque AC 1 minute M5 Condition P-N power terminal Tc = 25C, DC Tc = 25C, DC Tc = 25C P-N power terminal Tc = 25C, DC Tc = 25C, DC Tc = 25C VD-GND terminal IN-GND terminal FO-GND (L) terminal FO sink current Symbol VCC VCES IC IF PC Tj VCC VCES IC VR IF PC Tj VD VIN VFO IFO TC Tstg VISO Ratings 900 1200 75 75 600 150 900 1200 50 1200 50 400 150 20 20 20 14 -20 ~ +100 -40 ~ +125 2500 3 Unit V V A A W C V V A V A W C V V V mA C C V Nm Electrical Characteristics (Tj = 25C) a. Inverter Stage Characteristic Collector cut-off current Collector-emitter saturation voltage Forward voltage Symbol ICEX Test Condition VCE = 1200V VD = 15 V, IC = 75 A VIN = 3 V 0 V IF = 75A VCC = 600 V, IC = 75 A VD = 15 V, VIN = 3 V Inductive load Tj = 25C Tj = 125C Tj = 25C Tj = 125C Min 0.8 0V (Note 1) Typ. 2.7 2.6 2.0 1.5 0.3 0.14 1.5 0.25 Max 1 20 3.5 2.5 2.2 0.6 0.21 2.5 0.5 s Unit mA VCE (sat) VF ton tc (on) V V Switching time trr toff tc (off) 2 2001-05-29 MIG75Q201H b. Brake Stage Characteristic Collector cut-off current Collector-emitter saturation voltage Reverse current Forward voltage Symbol ICEX Test Condition VCE = 1200V VD = 15 V, IC = 50 A VIN = 3 V 0 V VR = 1200 V IF = 50A Tj = 25C Tj = 125C Tj = 25C Tj = 125C Min 0.8 VCC = 600 V, IC = 50 A VD = 15 V, VIN = 3 V Inductive load 0V (Note 1) Typ. 2.7 2.6 2.0 1.5 0.5 0.30 1.5 0.3 Max 1 20 3.5 1 20 2.7 2.2 1.0 0.45 2.5 0.6 s Unit mA VCE (sat) V IR VF ton tc (on) mA V Switching time trr toff tc (off) c. Control Stage (Tj = 25C) Characteristic Symbol ID (H) ID (L) VIN (on) IFO (on) IFO (off) OC VD = 15 V VD = 15 V, IC = 75 mA Test Condition Min 0.9 8 105 70 157 105 111 93 VD = 15 V 11.3 11.8 1 Typ. 20 80 1.1 10 150 100 225 150 10 118 100 12.0 12.5 2 Max 30 120 1.3 12 1 125 107 12.7 13.2 3 Unit mA V mA Control circuit current High side Low side Input-on signal voltage Fault output current Over current protection trip level Short circuit protection trip level Protection Normal Inverter Brake Inverter Brake VD = 15 V, Tj = 125C A SC toff (OC) OT OTr UV UVr tFO VD = 15 V, Tj = 125C VD = 15 V Case temperature A s C Over current cut-off time Over temperature protection Control supply under voltage protection Trip level Reset level Trip level Reset level V ms Fault output pulse width 3 2001-05-29 MIG75Q201H d. Thermal Resistance (Tj = 25C) Characteristic Symbol Test Condition Inverter IGBT Junction to case thermal resistance Rth (j-c) Inverter FRD Brake IGBT Brake FRD Case to fin thermal resistance Rth (c-f) Compound is applied Min Typ. 0.04 Max 0.208 0.50 0.312 1.00 C / W C / W Unit Note 1: Switching time test circuit & timing chart 4 2001-05-29 MIG75Q201H 5 2001-05-29 MIG75Q201H 6 2001-05-29 MIG75Q201H Package Dimensions: TOSHIBA 2-136A1A Unit: mm 7 2001-05-29 MIG75Q201H RESTRICTIONS ON PRODUCT USE 000707EAA * TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and conditions set forth in the "Handling Guide for Semiconductor Devices," or "TOSHIBA Semiconductor Reliability Handbook" etc.. * The TOSHIBA products listed in this document are intended for usage in general electronics applications (computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.). These TOSHIBA products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or bodily injury ("Unintended Usage"). Unintended Usage include atomic energy control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments, medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in this document shall be made at the customer's own risk. * The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA CORPORATION for any infringements of intellectual property or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any intellectual property or other rights of TOSHIBA CORPORATION or others. * The information contained herein is subject to change without notice. 8 2001-05-29 |
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